2SD2051 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type Darlington(For low-frequency amplification)

Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
s ^Features
q High foward current transfer ratio h_FE
q Incorporating a built-in zener diode
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60±10
V
Collector to emitter voltage V_CEO
60±10
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
2.5
A
Collector current
I_C
1.6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
12
W
2.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
V_BE(sat)
f_T
V_CB = 25V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CE = 10V, I_C = 1.0A
I_C = 1.0A, I_B = 1.0mA
I_C = 1.0A, I_B = 1.0mA
V_CE = 10V, I_C = 10mA, f = 200MHz
min
50
50
5
4000
200
E
typ max Unit
1
µA
1
µA
70
V
70
V
V
40000
1.5
V
2.2
V
MHz
*_{hFE Rank classification}
Rank
Q
R
S
h_FE 4000 to 10000 8000 to 20000 16000 to 40000
1