2SD2018 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type darlington

Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• High forward current transfer ratio h_FE
• Built-in 60 V Zener diode between base to collector
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
Collector-emitter voltage (Base open) V_CEO
60
+25
−10
V
60
+25
−10
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
1
A
Peak collector current
I_CP
1.5
A
Collector power
T_C = 25°C P_C
1.2
W
dissipation
Junction temperature
Storage temperature
5.0
T_j
150
°C
T_stg −55 to +150 °C
Note) _*: With a 100 mm × 100 mm × 2 mm Al heat sick.
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1 1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
C
B
R₁
R₂
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage ^*
Base-emitter saturation voltage ^*
V_CBO
V_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
I_C = 100 µA, I_E = 0
I_C = 1 mA, I_B = 0
V_CB = 25 V, I_E = 0
V_EB = 4 V, I_C = 0
V_CE = 10 V, I_C = 1.0 A
I_C = 1.0 A, I_B = 1.0 mA
I_C = 1.0 A, I_B = 1.0 mA
50
50
6 500
85
V
85
V
1
µA
2
mA
40 000 
1.8
V
2.2
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Pulse measurement
Publication date: May 2003
SJD00239BED
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