2SD1996 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage output amplification)

Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Low ON resistance R_on.
q High foward current transfer ratio h_FE.
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
25
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
12
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
s ^{Electrical Characteristics (Ta=25˚C)}
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
R_on*3
V_CB = 25V, I_E = 0
100
nA
I_C = 10µA, I_E = 0
25
V
I_C = 1mA, I_B = 0
20
V
I_E = 10µA, I_C = 0
12
V
V_CE = 2V, I_C = 0.5A^*2
200
800
V_CE = 2V, I_C = 1A^*2
60
I_C = 0.5A, I_B = 20mA
0.13
0.4
V
I_C = 0.5A, I_B = 50mA
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
V_CB = 10V, I_E = 0, f= 1MHz
10
pF
1.0
Ω
*1_{hFE1 Rank classification}
*3Ron Measurement circuit
1kΩ
I_B=1mA
*2 _{Pulse measurement}
Rank
h_FE1
R
S
T
200 ~ 350 300 ~ 500 400 ~ 800
V_{B VV} V_A
R_on=
V_B
V_A–V_B
!1000(Ω)
f=1kHz
V=0.3V
1