2SD1993 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

Transistor
2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
s ^Features
q Low noise voltage NV.
q High foward current transfer ratio h_FE.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
55
V
Collector to emitter voltage V_CEO
55
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
Noise voltage
NV
V_CB = 20V, I_E = 0
100
nA
V_CE = 20V, I_B = 0
1
µA
I_C = 10µA, I_E = 0
55
V
I_C = 2mA, I_B = 0
55
V
I_E = 10µA, I_C = 0
7
V
V_CE = 10V, I_C = 2mA
210
650
I_C = 100mA, I_B = 10mA
1.0
V
V_CB = 10V, I_E = –2mA, f = 200MHz
200
MHz
V_CE = 10V, I_C = 1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
210 ~ 340
S
290 ~ 460
T
360 ~ 650
1