2SD1979 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage output amplification)

Transistor
2SD1979
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s ^Features
q Low ON resistance R_on.
q High foward current transfer ratio h_FE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
25
V
Peak collector current
I_CP
500
mA
Collector current
I_C
300
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 3W
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
I_CBO
I_EBO
V_CEO
h_FE*1
V_CE(sat)
V_BE
V_CB = 50V, I_E = 0
V_EB = 25V, I_C = 0
I_C = 1mA, I_B = 0
V_CE = 2V, I_C = 4mA
I_C = 30mA, I_B = 3mA
V_CE = 2V, I_C = 4mA
1
µA
1
µA
20
V
500
2500
0.1
V
0.6
V
Transition frequency
Collector output capacitance
ON resistanse
f_T
C_ob
R_on*2
V_CB = 6V, I_E = –4mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
80
MHz
4.5
pF
1.0
Ω
*1_{hFE Rank classification}
Rank
S
T
h_FE
Marking Symbol
500 ~ 1500 800 ~ 2500
3WS
3WT
*2_{Ron Measurement circuit}
1kΩ
I_B=1mA
V_{B VV} V_A
R_on=
V_B
V_A–V_B
!1000(Ω)
f=1kHz
V=0.3V
1