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| 2SD1964 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For power switching) | |||
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Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
25
A
Collector current
IC
15
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
50
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
VCE = 2V, IC = 8A
IC = 7A, IB = 0.35A
IC = 15A, IB = 1.5A
IC = 7A, IB = 0.35A
IC = 15A, IB = 1.5A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 0.7A, IB2 = â 0.7A,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2
90 to 180 130 to 260
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Ï3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
â0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TOâ220 Full Pack Package(a)
min
typ
max Unit
10
µA
50
µA
80
V
45
90
260
30
0.5
V
1.5
V
1.5
V
2.5
V
20
MHz
0.5
µs
2.0
µs
0.2
µs
1
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