2SD1938 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
■ Features
• Low ON resistance R_on
• High forward current transfer ratio h_FE
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
25
V
Collector current
I_C
300
mA
Peak collector current
I_CP
500
mA
Collector power dissipation
P_C
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking symbol: 3W
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
20
V
Base-emitter voltage
V_BE V_CE = 2 V, I_C = 4 mA
0.6
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 50 V, I_E = 0
0.1
µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = 25 V, I_C = 0
0.1
µA
Forward current transfer ratio ^*1
h_FE V_CE = 2 V, I_C = 4 mA
500
2 500 
Collector-emitter saturation voltage
V_CE(sat) I_C = 30 mA, I_B = 3 mA
0.1
V
Transition frequency
f_T
V_CB = 6 V, I_E = −4 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
7
pF
ON resistance ^*2
R_on
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: Ron Measuremet circuit
Rank
S
T
No rank
1 kΩ
h_FE
500 to 1 500 800 to 2 500
Product of no-rank classification is not marked.
500 to 2 500
IB = 1 mA
V_B V_V V_A
f = 1 kHz
V = 0.3 V
Ron =
VB
VA − VB
× 1 000 (Ω)
Publication date: August 2004
SJC00313AED
1