2SD1893 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD1893
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1253
s ^Features
q Optimum for 40W HiFi output
q High foward current transfer ratio h_FE: 5000 to 30000
q Low collector to emitter saturation voltage V_CE(sat): <2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
130
V
Collector to emitter voltage V_CEO
110
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
10
A
Collector current
I_C
6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
50
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
15.0±0.3
11.0±0.2
φ3.2±0.1
Unit: mm
5.0±0.2
3.2
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 130V, I_E = 0
V_CE = 110V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 5V, I_C = 1A
V_CE = 5V, I_C = 5A
I_C = 5A, I_B = 5mA
I_C = 5A, I_B = 5mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 5A, I_B1 = 5mA, I_B2 = –5mA,
V_CC = 50V
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 5000 to 15000 8000 to 30000
min
110
2000
5000
typ max Unit
100
µA
100
µA
100
µA
V
30000
2.5
V
3.0
V
20
MHz
1.4
µs
4.5
µs
0.8
µs
1