English
Language : 

2SD1892 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)
Power Transistors
2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1252
s Features
q Optimum for 35W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): <2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage VCEO
100
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
8
A
Collector current
IC
5
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
45
W
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 120V, IE = 0
VCE = 100V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 4A
IC = 4A, IB = 4mA
IC = 4A, IB = 4mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 4mA, IB2 = –4mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
min
100
2000
5000
typ max Unit
100
µA
100
µA
100
µA
V
30000
2.5
V
3.0
V
20
MHz
2.5
µs
3.5
µs
1.0
µs
1