2SD1823 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
2SD1823
Silicon NPN epitaxial planer type
For low-frequency amplification
s ^Features
q High foward current transfer ratio h_FE.
q Low collector to emitter saturation voltage V_CE(sat).
q High emitter to base voltage V_EBO.
q Low noise voltage NV.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
40
V
Emitter to base voltage
V_EBO
15
V
Peak collector current
I_CP
100
mA
Collector current
I_C
50
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 1Z
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
V_CB = 20V, I_E = 0
100
nA
V_CE = 20V, I_B = 0
1
µA
I_C = 10µA, I_E = 0
50
V
I_C = 1mA, I_B = 0
40
V
I_E = 10µA, I_C = 0
15
V
V_CE = 10V, I_C = 2mA
400 1000 2000
I_C = 10mA, I_B = 1mA
0.05
0.2
V
V_CB = 10V, I_E = –2mA, f = 200MHz
120
MHz
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
R
400 ~ 800
1ZR
S
T
600 ~ 1200 1000 ~ 2000
1ZS
1ZT
1