2SD1820A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistors
2SD1820A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1219A
I Features
• Low collector to emitter saturation voltage V_CE(sat)
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
60
V
V_CEO
50
V
V_EBO
5
V
I_CP
1
A
I_C
500
mA
P_C
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
0.3^{+–00..01}
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Unit: mm
0.15^{+–00..0150}
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
Marking Symbol: X
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*1
Collector to emitter saturation voltage ^*1
Transition frequency ^*1
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
Symbol
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1 ^*2
h_FE2
V_CE(sat)
f_T
C_ob
Conditions
Min
V_CB = 20 V, I_E = 0
I_C = 10 µA, I_E = 0
60
I_C = 2 mA, I_B = 0
50
I_E = 10 µA, I_C = 0
5
V_CE = 10 V, I_C = 150 mA
85
V_CE = 10 V, I_C = 500 mA
40
I_C = 300 mA, I_B = 30 mA
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
V_CB = 10 V, I_E = 0, f = 1 MHz
Rank
h_FE1
Marking symbol
Q
85 to 170
XQ
R
120 to 240
XR
S
170 to 340
XS
No-rank
85 to 340
X
Product of no-rank is not classified and have no indication for rank.
Typ Max
0.1
340
0.35 0.6
200
6
15
Unit
µA
V
V
V
V
MHz
pF
1