2SD1820 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SD1820, 2SD1820A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1219 and 2SB1219A
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD1820
30
base voltage 2SD1820A
V_CBO
60
V
Collector to 2SD1820
25
V_CEO
V
emitter voltage 2SD1820A
50
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
500
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : W^(2SD1820)
X^(2SD1820A)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base 2SD1820
voltage
2SD1820A
I_CBO
V_CBO
Collector to emitter 2SD1820
voltage
V_CEO
2SD1820A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
f_T
C_ob
Conditions
min
V_CB = 20V, I_E = 0
30
I_C = 10µA, I_E = 0
60
25
I_C = 2mA, I_B = 0
50
I_E = 10µA, I_C = 0
5
V_CE = 10V, I_C = 150mA^*2
85
V_CE = 10V, I_C = 500mA^*2
40
I_C = 300mA, I_B = 30mA^*2
V_CB = 10V, I_E = –50mA^*2, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
Q
h_FE1
Marking ^2SD1820
Symbol
2SD1820A
85 ~ 170
WQ
XQ
R
120 ~ 240
WR
XR
S
170 ~ 340
WS
XS
typ max Unit
0.1
µA
V
V
V
160 340
0.35
0.6
V
200
MHz
6
15
pF
*2 _{Pulse measurement}
1