2SD1776 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Power Transistors
2SD1776, 2SD1776A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1776
80
V_CBO
V
base voltage 2SD1776A
100
Collector to 2SD1776
60
V_CEO
V
emitter voltage 2SD1776A
80
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
4
A
Collector current
I_C
2
A
Base current
I_B
0.5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
25
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1776
current
2SD1776A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1776
voltage
2SD1776A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = 80V, I_E = 0
V_CB = 100V, I_E = 0
V_CE = 40V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
h_FE*
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_stg
t_f
V_CE = 4V, I_C = 300mA
I_C = 1A, I_B = 25mA
I_C = 1A, I_B = 25mA
V_CE = 12V, I_C = 200mA, f = 10MHz
V_CB = 10V, I_E = 0, f = 1MHz
I_C = 1A, I_B1 = 25mA, I_B2 = –25mA,
V_CC = 50V
*_{hFE Rank classification}
Rank
Q
P
h_FE
500 to 1000 800 to 1500
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
100
µA
100
100
µA
100
µA
60
V
80
500
1500
1
V
1.2
V
40
MHz
30
pF
0.6
µs
2.5
µs
1
µs
1