2SD1775 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)

Power Transistors
2SD1775, 2SD1775A
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1775
80
V_CBO
V
base voltage 2SD1775A
100
Collector to 2SD1775
60
V_CEO
V
emitter voltage 2SD1775A
80
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
4
A
Collector current
I_C
2
A
Base current
I_B
0.5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
25
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1775
current
2SD1775A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1775
voltage
2SD1775A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = 80V, I_E = 0
V_CB = 100V, I_E = 0
V_CE = 40V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
h_FE*
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_stg
t_f
V_CE = 4V, I_C = 300mA
I_C = 1A, I_B = 25mA
I_C = 1A, I_B = 25mA
V_CE = 12V, I_C = 200mA, f = 10MHz
V_CB = 10V, I_E = 0, f = 1MHz
I_C = 1A, I_B1 = 25mA, I_B2 = –25mA,
V_CC = 50V
*_{hFE Rank classification}
Rank
Q
P
h_FE
500 to 1000 800 to 1500
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
100
µA
100
100
µA
100
µA
60
V
80
500
1500
1.0
V
1.2
V
40
MHz
30
pF
0.6
µs
2.5
µs
1.0
µs
1