2SD1773 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For midium speed switching)

Power Transistors
2SD1773
Silicon NPN triple diffusion planar type Darlington
For midium speed switching
Complementary to 2SB1193
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
120
V
Collector to emitter voltage V_CEO
120
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
12
A
Collector current
I_C
8
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
50
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
V_CEO(sus)
V_EBO
h_FE
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
t_on
t_stg
t_f
V_CB = 120V, I_E = 0
V_CE = 100V, I_B = 0
I_C = 2A, L = 10mH
I_E = 50mA, I_C = 0
V_CE = 3V, I_C = 4A
I_C = 4A, I_B = 8mA
I_C = 8A, I_B = 80mA
I_C = 4A, I_B = 8mA
I_C = 8A, I_B = 80mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 4A, I_B1 = 8mA, I_B2 = –8mA,
V_CC = 50V
E
min
120
7
1000
typ max Unit
100
µA
10
µA
V
V
20000
1.5
V
3
V
2
V
3.5
V
20
MHz
0.7
µs
6
µs
2
µs
1