2SD1755 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

Power Transistors
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s ^Features
q High forward current transfer ratio h_FE which has satisfactory
linearity
q High emitter to base voltage V_EBO
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
100
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
15
V
Peak collector current
I_CP
12
A
Collector current
I_C
6
A
Base current
I_B
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE*
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CB = 100V, I_E = 0
V_EB = 15V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 1A
I_C = 5A, I_B = 0.1A
V_CE = 12V, I_C = 0.5A, f = 10MHz
I_C = 5A, I_B1 = 0.1A, I_B2 = – 0.1A,
V_CC = 50V
min
typ
max Unit
100
µA
100
µA
60
V
300
2000
0.5
V
50
MHz
0.3
µs
1.5
µs
0.6
µs
*_{hFE Rank classification}
Rank
Q
P
h_FE
300 to 1200 800 to 2000
1