2SD1753 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Power Transistors
2SD1753
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
200
V
Collector to emitter voltage V_CEO
150
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
2.5
A
Collector current
I_C
1
A
Base current
I_B
0.1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_EBO
V_CEO
h_FE*
V_CE(sat)
f_T
V_CB = 200V, I_E = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 0.2A
I_C = 0.5A, I_B = 0.02A
V_CE = 4V, I_C = 0.1A, f = 10MHz
*_{hFE Rank classification}
Rank
Q
P
h_FE
500 to 1200 800 to 2000
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
100
µA
100
µA
150
V
500
2000
1
V
25
MHz
1