2SD1752 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching
Complementary to 2SB1148 and 2SB1148A
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q High-speed switching
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector current I_C
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1752
40
base voltage 2SD1752A
V_CBO
50
V
Collector to 2SD1752
20
emitter voltage 2SD1752A
V_CEO
40
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
20
A
Collector current
I_C
10
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1752
current
2SD1752A
Emitter cutoff current
Collector to emitter 2SD1752
voltage
2SD1752A
I_CBO
I_EBO
V_CEO
V_CB = 40V, I_E = 0
V_CB = 50V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*_{hFE2 Rank classification}
Rank
Q
P
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_stg
t_f
V_CE = 2V, I_C = 0.1A
V_CE = 2V, I_C = 3A
I_C = 10A, I_B = 0.33A
I_C = 10A, I_B = 0.33A
V_CE = 10V, I_C = 0.5A, f = 10MHz
V_CB = 10V, I_E = 0, f = 1MHz
I_C = 3A, I_B1 = 0.1A, I_B2 = – 0.1A,
V_CC = 20V
h_FE2
90 to 180 130 to 260
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
50
µA
50
50
µA
20
V
40
45
90
260
0.6
V
1.5
V
120
MHz
200
pF
0.3
µs
0.4
µs
0.1
µs
1