2SD1751 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Power Transistors
2SD1751
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1170
s ^Features
q High forward current transfer ratio h_FE which has satisfactory
linearity
q Low collector to emitter saturation voltage V_CE(sat)
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
4
A
Collector current
I_C
2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CES
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2*
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = 60V, V_BE = 0
V_CE = 30V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 4V, I_C = 0.1A
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 1A
I_C = 2A, I_B = 0.2A
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 1A, I_B1 = 0.1A, I_B2 = – 0.1A
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
70 to 150 120 to 250
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
200
µA
300
µA
1
mA
60
V
35
70
250
1.2
V
2
V
20
MHz
0.2
µs
3.5
µs
0.7
µs
1