2SD1750 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington

Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB1180 and 2SB1180A
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1750
60
V_CBO
V
base voltage 2SD1750A
80
Collector to 2SD1750
60
V_CEO
V
emitter voltage 2SD1750A
80
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
12
A
Collector current
I_C
8
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1750
current
2SD1750A
Emitter cutoff current
Collector to emitter 2SD1750
voltage
2SD1750A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_EB = 7V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 3V, I_C = 4A
V_CE = 3V, I_C = 8A
I_C = 4V, I_B = 8mA
I_C = 4V, I_B = 8mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 4A, I_B1 = 8mA, I_B2 = –8mA
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1 2000 to 5000 4000 to 10000
Internal Connection
B
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
60
80
2000
500
C
typ max Unit
100
µA
100
2
mA
V
10000
1.5
V
2
V
20
MHz
0.5
µs
4
µs
1
µs
E
1