2SD1748 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington

Power Transistors
2SD1748, 2SD1748A
Silicon NPN triple diffusion planar type Darlington
For low-freauency power amplification
Complementary to 2SB1178 and 2SB1178A
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1748
60
V_CBO
V
base voltage 2SD1748A
80
Collector to 2SD1748
60
emitter voltage 2SD1748A
V_CEO
80
V
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
Emitter to base voltage
V_EBO
5
Peak collector current
I_CP
4
Collector current
I_C
2
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
1.3
Junction temperature
Storage temperature
T_j
150
T_stg
–55 to +150
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
V
A
A
W
˚C
˚C
Conditions
3.0±0.2
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
Collector cutoff
2SD1748
current
2SD1748A
Collector cutoff
2SD1748
current
2SD1748A
Emitter cutoff current
Collector to emitter 2SD1748
voltage
2SD1748A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = 60V, I_E = 0
V_CB = 80V, I_B = 0
V_CE = 30V, I_B = 0
V_CE = 40V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
1
mA
1
2
mA
2
2
mA
60
V
80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
*_{hFE2 Rank classification}
Rank
Q
P
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 2A
V_CE = 4V, I_C = 2A
I_C = 2A, I_B = 8mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 2A, I_B1 = 8mA, I_B2 = –8mA,
V_CC = 50V
Internal Connection
B
1000
2000
C
10000
2.8
V
2.5
V
20
MHz
0.5
µs
4
µs
1
µs
h_FE2 2000 to 5000 4000 to 10000
E
1