2SD1747 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SD1747, 2SD1747A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1177
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector current I_C
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1747
130
V_CBO
V
base voltage 2SD1747A
150
Collector to 2SD1747
80
V_CEO
V
emitter voltage 2SD1747A
100
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
15
A
Collector current
I_C
7
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1747
voltage
2SD1747A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 100V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 2V, I_C = 0.1A
V_CE = 2V, I_C = 3A
I_C = 5A, I_B = 0.25A
I_C = 5A, I_B = 0.25A
V_CE = 10V, I_C = 0.5A, f = 10MHz
I_C = 3A, I_B1 = 0.3A, I_B2 = – 0.3A,
V_CC = 50V
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
10
µA
50
µA
80
V
100
45
90
260
0.5
V
1.5
V
30
MHz
0.5
µs
1.5
µs
0.1
µs
1