2SD1744 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SD1744
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1174
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector current I_C
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
130
V
Collector to emitter voltage V_CEO
80
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
6
A
Collector current
I_C
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
V_CB = 100V, I_E = 0
I_EBO
V_EB = 5V, I_C = 0
10
µA
50
µA
Collector to emitter voltage
V_CEO
I_C = 10mA, I_B = 0
80
V
Forward current transfer ratio
h_FE1
h_FE2*
V_CE = 2V, I_C = 0.1A
V_CE = 2V, I_C = 0.5A
45
90
260
Collector to emitter saturation voltage V_CE(sat)
I_C = 2A, I_B = 0.1A
0.5
V
Base to emitter saturation voltage V_BE(sat)
I_C = 2A, I_B = 0.1A
1.5
V
Transition frequency
f_T
V_CE = 10V, I_C = 0.5A, f = 10MHz
30
MHz
Turn-on time
Storage time
Fall time
t_on
I_C = 0.5A, I_B1 = 50mA, I_B2 = –50mA,
0.5
t_stg
t_f
V_CC = 50V
2.5
0.15
µs
µs
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1