2SD1741 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD1741, 2SD1741A
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
Complementary to 2SB1171 and 2SB1171A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory
linearity
q Low collector to emitter saturation voltage V_CE(sat)
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1741
200
base voltage 2SD1741A
V_CBO
200
V
Collector to 2SD1741
150
V_CEO
V
emitter voltage 2SD1741A
180
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
3
A
Collector current
I_C
2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SD1741
voltage
2SD1741A
I_CBO
I_EBO
V_CBO
V_CEO
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
V_EBO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
Conditions
V_CB = 200V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 50µA, I_E = 0
I_C = 5mA, I_B = 0
I_E = 500µA, I_C = 0
V_CE = 10V, I_C = 150mA
V_CE = 10V, I_C = 400mA
V_CE = 10V, I_C = 400mA
I_C = 500mA, I_B = 50mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
60 to 140 100 to 240
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
50
µA
50
µA
200
V
150
V
180
6
V
60
240
50
1
V
1
V
20
MHz
1