2SD1719 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD1719
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer
Unit: mm
ratio
8.5±0.2
6.0±0.2
3.4±0.3
1.0±0.1
■ Features
• High forward current transfer ratio h_FE which has satisfactory lin-
earity
• High emitter-base voltage (Collector open) V_EBO
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
100
V
Collector-emitter voltage (Base open) V_CEO
60
V
Emitter-base voltage (Collector open) V_EBO
15
V
Collector current
I_C
6
A
Peak collector current
I_CP
12
A
Base current
I_B
3
A
Collector power dissipation
P_C
40
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0) 1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
V_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
t_on
t_stg
t_f
I_C = 25 mA, I_B = 0
V_CB = 100 V, I_E = 0
V_EB = 15 V, I_C = 0
V_CE = 4 V, I_C = 1 A
I_C = 5 A, I_B = 0.1 A
V_CE = 12 V, I_C = 0.5 A, f = 10 MHz
I_C = 5 A
I_B1 = 0.1 A, I_B2 = − 0.1 A
V_CC = 50 V
60
V
100 µA
100 µA
300
2 000 
0.5
V
30
MHz
0.3
µs
1.5
µs
0.6
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h_FE
300 to 1200 800 to 2 000
Publication date: April 2003
SJD00212AED
1