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2SD1705 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type
Power Transistors
2SD1705
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1154
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• Full-pack package which can be installed to the heat sink with one
screw
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
130
V
Collector-emitter voltage (Base open) VCEO
80
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
10
A
Peak collector current
ICP
20
A
Collector power dissipation
PC
70
W
Ta = 25°C
3.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 3 A
VCE = 2 V, IC = 6 A
IC = 6 A, IB = 0.3 A
IC = 10 A, IB = 1 A
IC = 6 A, IB = 0.3 A
IC = 10 A, IB = 1 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 6 A, IB1 = 0.6 A, IB2 = − 0.6 A
VCC = 50 V
80
V
10
µA
50
µA
45

90
260
30
0.5
V
1.5
1.5
V
2.5
20
MHz
0.5
µs
2.0
µs
0.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180 130 to 260
Publication date: September 2003
SJD00210BED
1