English
Language : 

2SD1633 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type darlington
Power Transistors
2SD1633
Silicon NPN triple diffusion planar type darlington
For voltage switching
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High-speed switching
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
Collector-base voltage (Emitter open) VCBO
100
V
Collector-emitter voltage (Base open) VCEO
100
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
5
A
Peak collector current
ICP
8
A
Base current
IB
0.5
A
Collector power dissipation
PC
30
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-emitter sustaining voltage *2 VCEO(SUS) IC = 0.2 A, L = 25 mH
Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0
Collector-emitter cut-off current (Base open) ICEO VCE = 100 V, IB = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
Forward current transfer ratio *1
hFE VCE = 3 V, IC = 3 A
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 3 mA
Base-emitter saturation voltage
VBE(sat) IC = 3 A, IB = 3 mA
Transition frequency
fT
VCE = 10 V, IC = 1 A, f = 1 MHz
Turn-on time
ton
IC = 3 A, IB1 = 3 mA, IB2 = −3 mA
Storage time
tstg
VCC = 50 V
Fall time
tf
Min
100
1 500
Typ Max
100
100
5
15 000
1.5
2.0
15
3
5
3
Unit
V
µA
µA
mA

V
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: VCEO(SUS) test circuit
Rank
hFE
Q
P
1 500 to 6 000 5 000 to 15 000
50 Hz/60 Hz
mercury relay
X
L
120 Ω
6V
Y
1Ω
15 V
G
Publication date: March 2003
SJD00207AED
1