2SD1539 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For low-voltage switching)

Power Transistors
2SD1539, 2SD1539A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1071 and 2SB1071A
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1539
40
V_CBO
V
base voltage 2SD1539A
50
Collector to 2SD1539
20
emitter voltage 2SD1539A
V_CEO
40
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
25
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1539
current
2SD1539A
Emitter cutoff current
Collector to emitter 2SD1539
voltage
2SD1539A
I_CBO
I_EBO
V_CEO
V_CB = 40V, I_E = 0
V_CB = 50V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CE = 2V, I_C = 0.1A
V_CE = 2V, I_C = 1A
I_C = 2A, I_B = 0.1A
I_C = 2A, I_B = 0.1A
V_CE = 5V, I_C = 0.5A, f = 10MHz
I_C = 2A, I_B1 = 0.2A, I_B2 = – 0.2A,
V_CC = 20V
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
50
µA
50
50
µA
20
V
40
45
90
260
0.5
V
1.5
V
120
MHz
0.2
µs
0.5
µs
0.1
µs
1