2SD1535 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For high power amplification)

Power Transistors
2SD1535
Silicon NPN triple diffusion planar type Darlington
For high power amplification
s ^Features
q Extremely satisfactory linearity of the forward current transfer
ratio h_FE
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
500
V
Collector to emitter voltage V_CEO
400
V
Emitter to base voltage
V_EBO
12
V
Peak collector current
I_CP
14
A
Collector current
I_C
7
A
Base current
I_B
0.5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
50
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*_{VCEO(sus) Test circuit}
60Hz
I_CBO
I_CEO
I_EBO
V_CEO(sus)*
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 500V, I_E = 0
V_CE = 400V, I_B = 0
V_EB = 12V, I_C = 0
I_C = 100mA, R_BZ = ∞, L = 25mH
V_CE = 2V, I_C = 2A
V_CE = 2V, I_C = 6A
I_C = 7A, I_B = 70mA
I_C = 7A, I_B = 70mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 7A, I_B1 = 70mA, I_B2 = –70mA,
V_CC = 300V
X
L 25mH
I_C(A)
0.2
120Ω
Y
0.1
6V
1Ω _15V
G
80
min
typ
400
500
200
20
1.5
5.0
6.5
V_CE(V)
max Unit
0.1
mA
0.1
mA
100 mA
mA
2.0
V
2.5
V
MHz
µs
µs
µs
1