2SD1511 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type darlington(For low-frequency output amplification)

Transistor
2SD1511
Silicon NPN epitaxial planer type darlington
For low-frequency output amplification
s ^Features
q Forward current transfer ratio h_FE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h_FE
= 4000 to 2000.
q A shunt resistor is omitted from the driver.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
100
V
Collector to emitter voltage V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : P
Internal Connection
C
B
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE*1
V_CE(sat)
V_BE(sat)
f_T
Conditions
V_CB = 25V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CE = 10V, I_C = 1A^*2
I_C = 1.0A, I_B = 1.0mA^*2
I_C = 1.0A, I_B = 1.0mA^*2
V_CB = 10V, I_E = –50mA, f = 200MHz
*1_{hFE Rank classification}
Rank
Q
R
S
h_FE
Marking Symbol
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
PQ
PR
PS
min
100
80
5
4000
E
typ max Unit
100
nA
100
nA
V
V
V
40000
1.8
V
2.2
V
150
MHz
*2 _{Pulse measurement}
1