2SD1478 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s ^Features
q Forward current transfer ratio h_FE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h_FE
= 4000 to 20000.
q A shunt resistor is omitted from the driver.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD1478
30
V_CBO
V
base voltage 2SD1478A
60
Collector to 2SD1478
25
emitter voltage 2SD1478A
V_CEO
50
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
750
mA
Collector current
I_C
500
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 2N^(2SD1478)
2O^(2SD1478A)
Internal Connection
C
B
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base 2SD1478
voltage
2SD1478A
I_CBO
I_EBO
V_CBO
V_CB = 25V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100µA, I_E = 0
Collector to emitter 2SD1478
voltage
V_CEO
2SD1478A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
V_EBO
h_FE*1
V_CE(sat)
V_BE(sat)
f_T
I_C = 1mA, I_B = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CE = 10V, I_C = 500mA^*2
I_C = 500mA, I_B = 0.5mA^*2
I_C = 500mA, I_B = 0.5mA^*2
V_CB = 10V, I_E = –50mA, f = 200MHz
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
4000 ~ 10000 8000 ~ 20000
Marking ^2SD1478
2NQ
2NR
Symbol 2SD1478A 2OQ
2OR
min
30
60
25
50
5
4000
E
typ max Unit
100
nA
100
nA
V
V
V
20000
2.5
V
3.0
V
200
MHz
*2 _{Pulse measurement}
1