2SD1457 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
s ^Features
q High foward current transfer ratio h_FE
q High collector to base voltage V_CBO
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
200
V
Collector to 2SD1457
150
emitter voltage 2SD1457A
V_CEO
200
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
10
A
Collector current
I_C
6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
60
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
I_CBO
V_CEO(sus)
V_EBO
h_FE*
V_CE(sat)
V_BE(sat)
f_T
V_CB = 200V, I_E = 0
I_C = 2A, L = 10mH
I_E = 0.1A, I_C = 0
V_CE = 2V, I_C = 2A
I_C = 3A, I_B = 0.06A
I_C = 3A, I_B = 0.06A
V_CE = 10V, I_C = 0.5A, f = 1MHz
min
typ
max Unit
100
µA
150
V
5
V
700
10000
1.5
V
2.5
V
15
MHz
*_{hFE Rank classification}
Rank
Q
P
O
h_FE
700 to 2500 2000 to 5000 4000 to 10000
1