2SD1446 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD1446
Silicon NPN triple diffusion planar type Darlington
For power amplification
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s ^Features
q High foward current transfer ratio h_FE
q High collector to base voltage V_CBO
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
500
V
Collector to emitter voltage V_CEO
400
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
10
A
Collector current
I_C
6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
I_CBO
V_CEO(sus)*
V_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
V_CB = 350V, I_E = 0
I_C = 2A, L = 10mH
I_E = 0.1A, I_C = 0
V_CE = 2V, I_C = 2A
I_C = 3A, I_B = 0.06A
I_C = 3A, I_B = 0.06A
V_CE = 10V, I_C = 1A, f = 1MHz
E
min
typ
max Unit
100
µA
400
V
5
V
500
1.5
V
2.5
V
15
MHz
*_{VCEO(sus) Test circuit}
50/60Hz
mercury relay
120Ω
6V
1Ω
X
L 10mH
Y
15V
G
1