2SD1424 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
2SD1424
Silicon NPN epitaxial planer type
For low-frequency amplification
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q High foward current transfer ratio h_FE.
4.0±0.2
Unit: mm
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
40
V
Emitter to base voltage
V_EBO
15
V
Peak collector current
I_CP
100
mA
Collector current
I_C
50
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = 10V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
0.1
µA
1
µA
50
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 2mA
40
V
15
V
400
2000
Collector to emitter saturation voltage V_CE(sat)
I_C = 10mA, I_B = 1mA
0.05
0.2
V
Transition frequency
Noise voltage
f_T
V_CB = 10V, I_E = –2mA, f = 200MHz
200
MHz
V_CE = 10V, I_C = 1mA, G_V = 80dB
NV
R_g = 100kΩ, Function = FLAT
80
mV
*_{hFE Rank classification}
Rank
R
S
T
h_FE
400 ~ 800 600 ~ 1200 1000 ~ 2000
1