2SD1423 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1030 and 2SB1030A
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD1423
30
base voltage 2SD1423A
V_CBO
60
V
Collector to 2SD1423
25
V_CEO
V
emitter voltage 2SD1423A
50
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base
voltage
2SD1423
2SD1423A
I_CBO
I_CEO
V_CBO
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
0.1
µA
1
µA
30
V
60
Collector to emitter 2SD1423
25
voltage
2SD1423A ^VCEO
I_C = 2mA, I_B = 0
50
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
f_T
C_ob
I_E = 10µA, I_C = 0
7
V
V_CE = 10V, I_C = 150mA^*2
85
340
V_CE = 10V, I_C = 500mA^*2
40
I_C = 300mA, I_B = 30mA^*2
0.6
V
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
V_CB = 10V, I_E = 0, f = 1MHz
6
15
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
1