2SD1385 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For low-frequency output amplification)

Transistor
2SD1385
Silicon NPN triple diffusion planer type
For low-frequency output amplification
s ^Features
q High collector to base voltage V_CBO.
q High collector to emitter voltage V_CEO.
q Large collector power dissipation P_C.
q Low collector to emitter saturation voltage V_CE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
400
V
Collector to emitter voltage V_CEO
400
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = 100µA, I_E = 0
400
V
Collector to emitter voltage
V_CEO
I_C = 500µA, I_B = 0
400
V
Emitter to base voltage
V_EBO
I_E = 100µA, I_C = 0
5
V
Forward current transfer ratio
h_FE
V_CE = 5V, I_C = 30mA
30
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
V_CE(sat)
V_BE(sat)
f_T
I_C = 50mA, I_B = 5mA
I_C = 50mA, I_B = 5mA
V_CB = 30V, I_E = –20mA, f = 200MHz
1.5
V
1.5
V
40
MHz
Collector output capacitance
C_ob
V_CB = 30V, I_E = 0, f = 1MHz
7
pF
1