2SD1330 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage output amplification)

Transistor
2SD1330
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Low ON resistance R_on.
q High foward current transfer ratio h_FE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
25
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
12
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 25V, I_C = 0
100
nA
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
25
V
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
20
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
12
V
Forward current transfer ratio
h_FE1*1
h_FE2
V_CE = 2V, I_C = 0.5A^*2
V_CE = 2V, I_C = 1A^*2
200
800
60
Collector to emitter saturation voltage V_CE(sat)
I_C = 0.5A, I_B = 20mA
0.13
0.4
V
Base to emitter saturation voltage V_BE(sat)
I_C = 0.5A, I_B = 50mA
1.2
V
Transition frequency
f_T
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
10
pF
ON resistanse
R_on*3
1.0
Ω
*1_{hFE1 Rank classification}
Rank
R
S
T
*3_{Ron Measurement circuit}
1kΩ
I_B=1mA
*2 _{Pulse measurement}
h_FE1
200 ~ 350 300 ~ 500 400 ~ 800
V_{B VV} V_A
f=1kHz
V=0.3V
R_on=
V_B
V_A–V_B
!1000(Ω)
1