2SD1327 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington For midium speed power switching

Power Transistors
2SD1327
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
s ^Features
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
q Incorporating a zener diode of 60V zener voltage between col-
lector and base
q Minimized variation in the breakdown voltage
q Large energy handling capability
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
Parameter
Symbol
Ratings
Unit
2.54±0.25
Collector to base voltage
V_CBO
60±10
V
Collector to emitter voltage V_CEO
60±10
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
12
A
Collector current
I_C
8
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
45
W
2
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
Junction temperature
T_j
150
˚C
B
Storage temperature
T_stg
–55 to +150
˚C
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
I_CBO
I_EBO
V_CEO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
E_s/b*2
V_CB = 50V, I_E = 0
V_EB = 7V, I_C = 0
I_C = 5mA, I_B = 0
V_CE = 3V, I_C = 4A
V_CE = 3V, I_C = 8A
I_C = 4A, I_B = 8mA
I_C = 4A, I_B = 8mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 4A, I_B1 = 8mA, I_B2 = –8mA,
V_CC = 50V
I_C = 1A, L = 100mH, R_BE = 100Ω
50
2000
500
50
100
µA
2
mA
70
V
10000
1.5
V
2
V
20
MHz
0.5
µs
4
µs
1
µs
mJ
*1_{hFE1 Rank classification}
Rank
Q
P
h_FE1 2000 to 5000 4000 to 10000
*2_{Es/b Test circuit}
60Hz mercury relay
X
L
120Ω _RBE
6V
1Ω
Y
G
1