2SD1326 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington For midium speed power switching

Power Transistors
2SD1326
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
s ^Features
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
q Incorporating a zener diode of 60V zener voltage between col-
lector and base
q Minimized variation in the breakdown voltage
q Large energy handling capability
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to base voltage
V_CBO
60±10
V
Collector to emitter voltage V_CEO
60±10
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 50V, I_E = 0
100
µA
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
I_EBO
V_CEO
h_FE1
h_FE2*1
Collector to emitter saturation voltage V_CE(sat)
V_EB = 5V, I_C = 0
I_C = 5mA, I_B = 0
V_CE = 3V, I_C = 0.5A
V_CE = 3V, I_C = 3A
I_C = 3A, I_B = 12mA
I_C = 5A, I_B = 20mA
50
1000
2000
2
mA
70
V
10000
2.5
V
4
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
V_BE(sat)
f_T
t_on
t_stg
t_f
E_s/b*2
I_C = 3A, I_B = 12mA
2.5
V
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 12mA, I_B2 = –12mA,
V_CC = 50V
20
MHz
0.3
µs
3
µs
1
µs
I_C = 2A, L = 100mH, R_BE = 100Ω
50
mJ
*1_{hFE2 Rank classification}
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
*2_{Es/b Test circuit}
60Hz mercury relay
X
120Ω _RBE
6V
L
Y
1Ω
G
1