2SD1280 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage type medium output power amplification)

Transistor
2SD1280
Silicon NPN epitaxial planer type
For low-voltage type medium output power amplification
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Satisfactory operation performances at high efficiency with the
low-voltage power supply.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
1.5±0.1
0.4±0.04
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
20
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
2
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : R
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_BE(sat)
V_CE(sat)
f_T
C_ob
V_CB = 10V, I_E = 0
I_C = 1mA, I_B = 0
20
I_E = 10µA, I_C = 0
5
V_CE = 2V, I_C = 500mA^*2
90
V_CE = 2V, I_C = 1.5A^*2
50
I_C = 500mA, I_B = 50mA^*2
I_C = 1A, I_B = 50mA^*2
V_CB = 6V, I_E = –50mA, f = 200MHz
V_CB = 6V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
Q
h_FE1
Marking Symbol
90 ~ 155
RQ
R
130 ~ 210
RR
S
180 ~ 280
RS
T
250 ~ 360
RT
typ max Unit
1
µA
V
V
150 360
100
1.2
V
0.5
V
150
MHz
18
pF
*2 _{Pulse measurement}
1