2SD1277 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For midium speed power switching)

Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB951 and 2SB951A
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
Collector to 2SD1277
60
V_CBO
V
base voltage 2SD1277A
80
Collector to 2SD1277
60
emitter voltage 2SD1277A
V_CEO
80
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
12
A
Collector current
I_C
8
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
45
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SD1277
current
2SD1277A
Emitter cutoff current
Collector to emitter 2SD1277
voltage
2SD1277A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_EB = 7V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 3V, I_C = 4A
V_CE = 3V, I_C = 8A
I_C = 4A, I_B = 8mA
I_C = 4A, I_B = 8mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 4A, I_B1 = 8mA, I_B2 = –8mA,
V_CC = 50V
60
80
2000
500
20
100
µA
100
2
mA
V
10000
1.5
V
2
V
MHz
0.5
µs
4
µs
1
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1 2000 to 5000 4000 to 10000
1