2SD1276 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB950 and 2SB950A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
φ3.1±0.1
1.3±0.2
1.4±0.1
Parameter
Symbol
Ratings
Unit
Collector to 2SD1276
60
V_CBO
V
base voltage 2SD1276A
80
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to 2SD1276
60
emitter voltage 2SD1276A
V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
s ^{Electrical Characteristics (T}C^=25˚C)
E
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SD1276
current
2SD1276A
Collector cutoff
2SD1276
current
2SD1276A
Emitter cutoff current
Collector to emitter 2SD1276
voltage
2SD1276A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_CE = 30V, I_B = 0
V_CE = 40V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
200
µA
200
500
µA
500
2
mA
60
V
80
Forward current transfer ratio
h_FE1
h_FE2*
Collector to emitter saturation voltage V_CE(sat)
Base to emitter voltage
V_BE
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
*_{hFE2 Rank classification}
V_CE = 3V, I_C = 0.5A
V_CE = 3V, I_C = 3A
I_C = 3A, I_B = 12mA
I_C = 5A, I_B = 20mA
V_CE = 3V, I_C = 3A
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 12mA, I_B2 = –12mA,
V_CC = 50V
1000
2000
10000
2
V
4
2.5
V
20
MHz
0.5
µs
4
µs
1
µs
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
1