2SD1275 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB949 and 2SB949A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1275
60
V_CBO
V
base voltage 2SD1275A
80
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to 2SD1275
60
emitter voltage 2SD1275A
V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
4
A
Collector current
I_C
2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
35
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SD1275
current
2SD1275A
Collector cutoff
2SD1275
current
2SD1275A
Emitter cutoff current
Collector to emitter 2SD1275
voltage
2SD1275A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_CE = 30V, I_B = 0
V_CE = 40V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
1
mA
1
2
mA
2
2
mA
60
V
80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 2A
V_CE = 4V, I_C = 2A
I_C = 2A, I_B = 8mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 2A, I_B1 = 8mA, I_B2 = –8mA,
V_CC = 50V
1000
2000
10000
2.8
V
2.5
V
20
MHz
0.5
µs
4
µs
1
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
1