2SD1274 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
s ^Features
q High collector to base voltage V_CBO
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
2SD1274
150
Collector to
2SD1274A
V_CBO
200
V
base voltage
2SD1274B
250
2SD1274
150
Collector to
2SD1274A
V_CES
200
V
emitter voltage
2SD1274B
250
Collector to emitter voltage V_CEO
80
V
Emitter to base voltage
V_EBO
6
V
Collector current
I_C
5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Collector cutoff
current
2SD1274
2SD1274A
2SD1274B
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
Symbol
I_CBO
V_CEO(sus)*
V_EBO
h_FE
V_BE
V_CE(sat)
f_T
t_f
Conditions
V_CB = 150V, I_E = 0
V_CB = 200V, I_E = 0
V_CB = 250V, I_E = 0
I_C = 0.2A, L = 25mH
I_E = 1mA, I_C = 0
V_CE = 4V, I_C = 5A
V_CE = 4V, I_C = 5A
I_C = 5A, I_B = 1A
V_CE = 10V, I_C = 0.5A, f = 10MHz
I_C = 5A, I_B1 = 0.8A, V_EB = –5V
*_{VCEO(sus) Test circuit 60Hz}
X
L 25mH
I_C(A)
0.2
120Ω
Y
0.1
6V
1Ω _15V
G
80
min
typ
max Unit
1
1
mA
1
80
V
6
V
14
1.5
V
1.6
V
40
MHz
1
µs
V_CE(V)
1