2SD1273 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Complementary to 2SB1299
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1273
80
V_CBO
V
base voltage 2SD1273A
100
Collector to 2SD1273
60
V_CEO
V
emitter voltage 2SD1273A
80
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
6
A
Collector current
I_C
3
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
current
2SD1273
I_CBO
2SD1273A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1273
voltage
2SD1273A
I_CEO
I_EBO
V_CEO
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
h_FE*
V_CE(sat)
f_T
V_CB = 80V, I_E = 0
V_CB = 100V, I_E = 0
V_CE = 40V, I_B = 0
V_CB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 0.5A
I_C = 2A, I_B = 0.05A
V_CE = 12V, I_C = 0.2A, f = 10MHz
min
typ
60
80
500
50
*_{hFE Rank classification}
Rank
Q
P
O
h_FE
500 to 1000 800 to 1500 1200 to 2500
Note: Ordering can be made by the common rank (PQ rank h_FE = 500 to 1500) in the rank classification.
max
100
100
100
100
2500
1
Unit
µA
µA
µA
V
V
MHz
1