2SD1267 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD1267, 2SD1267A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB942 and 2SB942A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1267
60
V_CBO
V
base voltage 2SD1267A
80
Collector to 2SD1267
60
emitter voltage 2SD1267A
V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1267
current
2SD1267A
Collector cutoff
2SD1267
current
2SD1267A
Emitter cutoff current
Collector to emitter 2SD1267
voltage
2SD1267A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CES
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CB = 60V, V_BE = 0
V_CB = 80V, V_BE = 0
V_CE = 30V, I_B = 0
V_CE = 60V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 3A
V_CE = 4V, I_C = 3A
I_C = 4A, I_B = 0.4A
V_CE = 5V, I_C = 0.5A, f = 1MHz
I_C = 4A, I_B1 = 0.4A, I_B2 = – 0.4A,
V_CC = 50V
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
400
µA
400
700
µA
700
1
mA
60
V
80
70
250
15
2
V
1.5
V
20
MHz
0.4
µs
1.2
µs
0.5
µs
1