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2SD1266 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB941 and 2SB941A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1266
60
VCBO
V
base voltage 2SD1266A
80
Collector to 2SD1266
60
VCEO
V
emitter voltage 2SD1266A
80
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
5
A
Collector current
IC
3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
35
W
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1266
current
2SD1266A
Collector cutoff
2SD1266
current
2SD1266A
Emitter cutoff current
Collector to emitter 2SD1266
voltage
2SD1266A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
200
µA
200
300
µA
300
1
mA
60
V
80
70
250
10
1.8
V
1.2
V
30
MHz
0.5
µs
2.5
µs
0.4
µs
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
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