2SD1264A-P Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-frequency power amplification
For TV vertical deflection output
Complementary to 2SB0940, 2S0940A
/ _{■ Features}
• High collector-emitter voltage (Base open) V_CEO
e _{• Large collector power dissipation PC}
e. _{• Full-pack package which can be installed to the heat sink with one screw}
nc ^d le ^{stag ■ Absolute Maximum Ratings Ta = 25°C}
yc _Parameter
Symbol Rating
Unit
a ^e lifec Collector-base voltage (Emitter open) V_CBO
200
V
ct _{Collector-emitter voltage 2SD1264 VCEO}
150
V
n ^{u du} (Base open)
2SD1264A
180
Pro _{Emitter-base voltage (Collector open) VEBO}
6
V
te ^{tin four Collectorcurrent}
I_C
2
A
ing _type ^{n. Peak collector current}
I_CP
3
A
in ^{n llow e tio Collector power}
T_C = 25°C P_C
30
W
fo anc pe ^{ed rma dissipation}
2.0
a ^{o ludes inten e ty typ info n/ Junction temperature}
c _ed ^inc _ed ^ma _tenanc ^{tinued type test .jp/e Storage temperature}
T_j
150
°C
T_stg −55 to +150 °C
M _is tinu ^{lan ain con ed ut la ic.co ■ Electrical Characteristics Ta = 25°C ± 3°C}
p ^m dis tinu ^{abo son Parameter}
Symbol
Conditions
con ^{ed on L na Collector-base voltage (Emitter open)}
/Dis ^{plan disc g UR n.pa Collector-emitter voltage 2SD1264}
e ^{in ico (Base open)}
2SD1264A
V_CBO
V_CEO
I_C = 50 µA, I_E = 0
I_C = 5 mA, I_B = 0
D_{anc llow m Emitter-base voltage (Collector open)}
ten ^{fo .se Base-emitter voltage}
in isit ^ww _{Collector-base cutoff current (Emitter open)}
Ma e ^{v ://w} _{Emitter-base cutoff current (Collector open)}
Pleas ^{http Forward current transfer ratio}
V_EBO
V_BE
I_CBO
I_EBO
h_FE1 ^*
h_FE2
I_E = 500 µA, I_C = 0
V_CE = 10 V, I_C = 400 mA
V_CB = 200 V, I_E = 0
V_EB = 4 V, I_C = 0
V_CE = 10 V, I_C = 150 mA
V_CE = 10 V, I_C = 400 mA
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5^{+–00..12}
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Min Typ Max Unit
200
V
150
V
180
6
V
1.0
V
50
µA
50
µA
60
240

50
Collector-emitter saturation voltage
V_CE(sat) I_C = 500 mA, I_B = 50 mA
1.0
V
Transition frequency
f_T
V_CE = 10 V, I_C = 0.5 A, f = 1 MHz
20
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
60 to 140 100 to 240
Publication date: April 2003
SJD00180BED
1