2SD1264 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
For TV vertical deflection output
Complementary to 2SB940 and 2SB940A
s ^Features
q High collector to emitter V_CEO
q Large collector power dissipation P_C
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
200
V
Collector to 2SD1264
150
V_CEO
V
emitter voltage 2SD1264A
180
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
3
A
Collector current
I_C
2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SD1264
voltage
2SD1264A
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
V_CB = 200V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 50µA, I_E = 0
I_C = 5mA, I_B = 0
I_E = 500µA, I_C = 0
V_CE = 10V, I_C = 150mA
V_CE = 10V, I_C = 400mA
V_CE = 10V, I_C = 400mA
I_C = 500mA, I_B = 50mA
V_CE = 5V, I_C = 0.5A, f = 1MHz
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
60 to 140 100 to 240
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
50
µA
50
µA
200
V
150
V
180
6
V
60
240
50
1
V
1
V
20
MHz
1