2SD1262 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington

Power Transistors
2SD1262, 2SD1262A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
8.5±0.2
Complementary to 2SB939 and 2SB939A
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1262
60
V_CBO
V
base voltage 2SD1262A
80
Collector to 2SD1262
60
V_CEO
V
emitter voltage 2SD1262A
80
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
12
A
Collector current
I_C
8
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
45
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
current
2SD1262
2SD1262A ^ICBO
Emitter cutoff current
I_EBO
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_EB = 7V, I_C = 0
Collector to emitter voltage
V_CEO
I_C = 30mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CE = 3V, I_C = 4A
V_CE = 3V, I_C = 8A
I_C = 4A, I_B = 8mA
I_C = 4A, I_B = 8mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 4A, I_B1 = 8mA, I_B2 = –8mA,
V_CC = 50V
*_{hFE1 Rank classification}
Rank
R
Q
P
h_FE1 1000 to 2500 2000 to 5000 4000 to 10000
Internal Connection
B
min
60
80
1000
500
C
E
typ max Unit
100
µA
100
2
mA
V
10000
1.5
V
2
V
20
MHz
0.5
µs
4
µs
1
µs
1